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| Imagem | Modelo | Preço | Número | Existências | Fabricante | Descrever | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ver | Taiwan Semiconductor | MOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 600 V | 4 A | 0.69 Ohms | 2 V | 9.6 nC | Enhancement | |||
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Ver | Taiwan Semiconductor | MOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet | +/- 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 600 V | 4 A | 0.69 Ohms | 2 V | 9.6 nC | Enhancement |
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