- Fabricante :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Filtro seleccionado :
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| Imagem | Modelo | Preço | Número | Existências | Fabricante | Descrever | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia | MOSFET BUK7K8R7-40E/LFPAK56D/REEL 7 | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 7 mOhms, 7 mOhms | 2.4 V, 2.4 V | 21.8 nC, 21.8 nC | Enhancement | ||
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2,497
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ROHM Semiconductor | MOSFET Nch+Nch 30V Power MOSET | 20 V, 20 V | SMD/SMT | HSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 14 A, 14 A | 7 mOhms, 7 mOhms | 1 V, 1 V | 24 nC, 24 nC | Enhancement |
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