- Fabricante :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Filtro seleccionado :
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| Imagem | Modelo | Preço | Número | Existências | Fabricante | Descrever | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia | MOSFET N-channel 30 V 6.1 mo FET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 66 A | 6.5 mOhms | 1.68 V | 13.6 nC | Enhancement | ||
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39
Disponível EM stock
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Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=1.70V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 1.7 mOhms | 1.68 V | Enhancement | |||
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Ver | Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=1.70V | 10.6 V | SMD/SMT | SOIC-16 | - 40 C | + 85 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 80 mA | 13 GOhms | 1.68 V | Enhancement | ||||
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Ver | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=1.70V | 10.6 V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | 10.6 V | 80 mA | 13 GOhms | 1.68 V | Enhancement |
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