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| Imagem | Modelo | Preço | Número | Existências | Fabricante | Descrever | Package / Case | Series | Packaging | Memory Type | Memory Size | Technology | Access Time | Mounting Type | Operating Temperature | Part Status | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Memory Interface | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | |
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Ver | Micron Technology Inc. | IC DRAM 512M PARALLEL 60VFBGA | 60-VFBGA | - | Tube | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.0ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-VFBGA (8x9) | 0 | 1782 | |||
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Ver | ISSI, Integrated Silicon Solution Inc | IC DRAM 512M PARALLEL 54TSOP | 54-TSOP (0.400", 10.16mm Width) | - | Tube | Volatile | 512Mb (32M x 16) | SDRAM | 5.4ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 143MHz | - | Parallel | 3 V ~ 3.6 V | 54-TSOP II | 0 | 108 | |||
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Ver | ISSI, Integrated Silicon Solution Inc | IC DRAM 512M PARALLEL 200MHZ | 66-TSSOP (0.400", 10.16mm Width) | - | Tube | Volatile | 512Mb (32M x 16) | SDRAM - DDR | 700ps | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 200MHz | 15ns | Parallel | 2.3 V ~ 2.7 V | 66-TSOP II | 0 | 216 | |||
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Ver | ISSI, Integrated Silicon Solution Inc | IC DRAM 512M PARALLEL 166MHZ | 66-TSSOP (0.400", 10.16mm Width) | - | Tube | Volatile | 512Mb (32M x 16) | SDRAM - DDR | 700ps | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 2.3 V ~ 2.7 V | 66-TSOP II | 0 | 216 | |||
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Ver | Alliance Memory, Inc. | IC DRAM 512M PARALLEL 66TSOP | 66-TSSOP (0.400", 10.16mm Width) | - | Tube | Volatile | 512Mb (32M x 16) | SDRAM - DDR | 700ps | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 200MHz | 15ns | Parallel | 2.5 V ~ 2.7 V | 66-TSOP II | 0 | 1000 |
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