- Vds - Drain-Source Breakdown Voltage :
- Gain :
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| Imagem | Modelo | Preço | Número | Existências | Fabricante | Descrever | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Gain | |
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Ver | NXP / Freescale | RF MOSFET Transistors BL RF | SMD/SMT | NI-1230GS-4L-4 | + 150 C | Reel | 1 kW | Si | N-Channel | - 500 mV, + 112 V | 2.6 A | 19.6 dB | |||
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Ver | NXP / Freescale | RF MOSFET Transistors BL RF | SMD/SMT | NI-1230GS-4L-4 | + 150 C | Reel | 1 kW | Si | N-Channel | - 500 mV, + 105 V | 2.6 A | 17.7 dB | |||
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Ver | NXP / Freescale | RF MOSFET Transistors BL RF | SMD/SMT | NI-1230GS-4L-4 | + 150 C | Reel | 1 kW | Si | N-Channel | - 500 mV, + 105 V | 2.6 A | 17.7 dB |
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