- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Filtro seleccionado :
7 Produto
Imagem | Modelo | Preço | Número | Existências | Fabricante | Descrever | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ver | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | + 225 C | Tube | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | ||||||
|
Ver | NXP Semiconductors | RF MOSFET Transistors 2.4-2.5GHz 65V 12dB | SMD/SMT | SOT-502B-3 | Tube | 180 W | Si | 65 V | 1.3 A | 69 mOhms | 12 dB | ||||||
|
Ver | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | + 225 C | Reel | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | ||||||
|
Ver | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | Reel | Si | 65 V | 900 mA | 100 mOhms | ||||||||
|
Ver | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | Tube | Si | 65 V | 900 mA | 100 mOhms | ||||||||
|
Ver | NXP Semiconductors | RF MOSFET Transistors TRANS LDMOS NCH 75V | SMD/SMT | SOT-502B-3 | + 150 C | Tube | 200 W | Si | N-Channel | 75 V | 150 mA | 60 mOhms | 13 dB | ||||
|
Ver | NXP Semiconductors | RF MOSFET Transistors 2.4-2.5GHz 65V 12dB | SMD/SMT | SOT-502B-3 | Reel | 180 W | Si | 65 V | 1.3 A | 69 mOhms | 12 dB |
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